Technology

    Samsung 4TB 990 PRO NVMe SSD series specs and pricing!

    Samsung has finally announced the specs, pricing, and availability of the Samsung 4TB 990 PRO SSD series...
    Samsung 990 PRO SSD 4TB

    A few weeks ago, Samsung announced that the company would launch the 4TB version of its flagship internal M.2 PCIe NVMe SSD, the 990 PRO series, soon. Today, the brand has revealed the pricing, specifications, and availability of the 4TB 990 PRO SSD for select markets, including the US. Here are the details about the specs and pricing of the Samsung 4TB 990 PRO NVMe SSD

    Samsung 990 PRO and 990 PRO with Heatshink comes with improved technology

    One of the best features of the new SSD series is that Samsung uses its latest V8 technology and improved controller. With its enhanced performance, Samsung claims that the 990 PRO series offers near-max performance in a PCIe 4.0 interface. According to the official announcements, the new 4TB SSD with Heatsink is equipped with an effective, slim heatsink to offer high-performance computing and gaming capabilities.

    990 PRO

    Samsung says, “The 990 PRO series achieves breakthrough power efficiency, with an up to 50% performance improvement in comparison to the previous 980 PRO series. It also incorporates a nickel coating on the controller and features a heat spreader label on the back side of the SSD, ensuring optimal temperature level maintenance and minimal performance fluctuations over time.”

    Additionally, the company has announced the availability of the new SSD series. The 4TB 990 PRO and 990 PRO with Heatsink will be available in early October 2023, while the 1TB and 2TB models are already on sale. The 4TB 990 PRO version costs $344.99 in the US. On the other side, Samsung 990 Pro with Heatsink costs $354.99 in the US.

    Samsung 990 PRO SSD

    Samsung SSD 990 PRO | 990 PRO With Heatsink Specifications

    CategorySamsung SSD 990 PRO | 990 PRO with Heatsink
    InterfacePCIe Gen 4.0, x4, NVMe 2.0
    Form FactorM.2 (2280)
    Storage MemorySamsung V-NAND 3-bit TLC
    ControllerSamsung In-house controller
    Capacity1TB2TB4TB
    DRAM1GB LPDDR42GB LPDDR44GB LPDDR4
    Sequential Read/Write Speedup to 7,450MB/s, up to 6,900MB/s
    Random Read/Write Speed (QD32)up to 1,600K IOPS, 1,550K IOPS
    Management SoftwareSamsung Magician Software
    Data EncryptionAES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667)
    Total Bytes Written600TB1200TB2400TB

    No comments yet Write the First Comment
    ×

    Your comment has been submitted,
    it will be published after approval.

    Write a Comment