Samsung, one of the world’s largest semiconductor memory chip manufacturers, introduced its new CXL (Compute Express Link) memory modules and HBM3E memory at the event held today. Let’s take a look at the details together.

Samsung will direct supercomputers

Today the company introduced new memory modules and HBM3E memory. These products will be used in cloud servers and supercomputers for artificial intelligence and other high-performance computing needs.

At the Memory Con 2024 fair held at the Santa Clara Computer History Museum in Silicon Valley, Samsung announced CXL Memory Module – Box (CMM-B), CXL Memory Module – DRAM (CMM-D), CXL Memory Module Hybrid Layered Memory (CMM-H). TM) and introduced HBM3E 12H memory.

CXL Memory Module – Box (CMM-B) appears as a DRAM product. With its E3.S form factor, it can accommodate eight CMM-D devices and offers up to 2 TB DRAM capacity. It has 60 GB/s bandwidth and a latency of only 596 nanoseconds. It can be used in applications such as Artificial Intelligence, Data Analytics, Creative AI and In-Memory Database (IMDB).

CMM-D is a CXL Memory Module – DRAM that uses Samsung’s DRAM memories with the CXL open standard interface. It provides efficient, low-latency connectivity between the CPU and memory expansion devices.

Red Hat and Samsung will continue their collaboration to develop CXL open source and reference models. They will also collaborate on various other memory and storage products.

Samsung showcased the industry’s first Rack-Level memory with Supermicro. This memory will be used to increase memory bandwidth and capacity for data centers handling demanding workloads. It is extremely scalable and can replace standard architectures with inefficiencies and lack of flexibility for modern applications.

By Broadcom in collaboration with VMWare, Samsung introduced the Peaberry project. This will be the world’s first FPGA-based layered memory for hypervisors. Called CXL Memory Module Hybrid Tiered Memory (CMM-H TM), this memory will be a hybrid solution that combines DRAM and NAND flash memory in an Add-In Card (AIC) format and will be able to tackle memory management challenges, increase performance, optimize throughput times and will reduce the total cost.

Samsung’s HBM3E 12H memory, the world’s first 12-stack HBM3E DRAM memory chip offering the highest capacity achieved using HBM technology, was also exhibited at Memcon 2024. HBM3E 12H memory modules feature Samsung’s advanced thermal compression conductive film (TC NCF) technology, which increases vertical density by more than 20% compared to its previous version. Samsung plans to start mass production for the HBM3E 12H in the first half of this year.