Micron has announced a new semiconductor investment plan totaling $200 billion in the US. The company plans to establish new production and R&D facilities in four different states, providing direct and indirect employment for approximately 90,000 people.
Micron to invest $200 billion in the US
$150 billion of the investment was allocated for production and $50 billion for research and development activities. With this step, which will also enable HBM production in the US, Micron has initiated the process of establishing a long-term production network.
The company’s first production facility is being built near Boise in the state of Idaho. The facility, called “Fab ID1”, is planned to begin production in the second half of 2027. The second factory, Fab ID2, to be located in the same region, will be established next to the first facility and will benefit from shared infrastructure and R&D activities. This second factory is expected to be commissioned before the facility planned in New York.
The production campus planned to be established in New York state stands out as one of the company’s largest investments. The campus, planned to be built in four phases, will include approximately 55,700 square meters of cleanroom space in each phase.
Construction on the New York facility has not yet begun. The company plans to break ground by the end of 2025 following environmental assessment processes. The New York investment is central to Micron’s strategy to establish a permanent, large-scale manufacturing infrastructure in the US. With the completion of these facilities, Micron plans to produce 40% of its DRAM production within the US borders in the next decade.
Micron is seen expanding its investment plan not only with new factories but also with the development of existing facilities. The Manassas facility in Virginia is being expanded within this scope. The facility currently produces memory chips for the automotive, defense and aerospace industries.
After the expansion, a high-bandwidth memory (HBM) packaging line will also be commissioned at this facility. According to the company’s statement, HBM5 or HBM6 production will take place after DRAM production in Idaho reaches a certain level.
