Samsung Electronics has received approval for the production of 6th generation DRAM. The company has achieved efficiency rates between 50% and 70% in tests on these new DRAMs, which it developed with advanced 10-nanometer class production technology. This development is in line with Samsung’s plan to introduce new generation products approximately every two years.

Samsung is moving to 6th generation DRAM production

The most important application area of ​​the new DRAM technology will be the high-bandwidth memory (HBM) segment. Samsung plans to start mass production of HBM4 memory in the second half of 2025.

In this process, 6th generation DRAM technology will be used and the hybrid bonding technology introduced in May will be included in the memories. The hybrid bonding method will provide ultra-wide memory interfaces while reducing heat resistance. Thus, the increasing bandwidth and efficiency demands of artificial intelligence and high-performance computing applications will be met.

SK hynix, one of the leading companies in the HBM market, continues its HBM4 development with 5th generation DRAM technology and has been offering HBM4 samples to its major customers since March of this year. Samsung and SK hynix are advancing on similar timelines for mass production.

One of the most important steps ahead for Samsung is to successfully complete the qualification tests conducted by Nvidia for HBM4 memory. This approval is critical for Samsung to increase its supply volume in the market. The company is also waiting for qualification approval from Nvidia for the 12-layer HBM3E memory it supplies to AMD.

Samsung’s move aims to intensify competition in the field of memory technologies and establish a strong position in the memory market for high-performance and artificial intelligence-supported applications